2001/01/25 by V. I. Litvinov, V. K. Dugaev · 2 citations
Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.86.5593
4 pages with 3 figures
arxiv created 2001/01/25 · openalex publication_date 2001/06/11 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/31
The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formation of ferromagnetic clusters and the percolation picture of phase transition describes well all available experimental data and allows us to predict the Mn-composition dependence of transition temperature in wurtzite (Ga,In,Al)N epitaxial layers.