2001/01/23 by Mikio Eto
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic orbital #Chemistry #Condensed matter physics #Conductance #Coulomb #Coulomb blockade #Electron #Excited state #Ground state #Kondo effect #Oscillation (cell signaling) #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Semiconductor Quantum Structures and Devices #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1143/jjap.40.1929
Review paper of our work, to appear in Proc. Int. Symp. on Formation, Physics and Device Application of Quantum Dot Structures (QDS 2000, Sapporo, Japan), Jpn. J. Appl. Phys. [11 pages, 6 figures]
arxiv created 2001/01/23 · openalex publication_date 2001/03/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
Electronic states and transport phenomena in semiconductor quantum dots are studied theoretically. Taking account of the electron-electron Coulomb interaction by the exact diagonalization method, the ground state and low-lying excited states are calculated as functions of magnetic field. Using the obtained many-body states, we discuss the temperature dependence of the conductance peaks in the Coulomb oscillation. In the Coulomb blockade region, elastic and inelastic cotunneling currents are evaluated under finite bias voltages. The cotunneling conductance is markedly enhanced by the Kondo effect. In coupled quantum dots, molecular orbitals and electronic correlation influence the transport properties.