2000/11/24 by V. A. Krupenin, A. B. Zorin, D. E. Presnov +3 · 1 citation
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.1389758
published as Physics -- Uspekhi (Russia) [Usp. Fiz. Nauk (Suppl.)] 171, 113-116 (2001); J. Appl. Phys. 90, 2411 (2001) · 5 pages incl. 4 figs
arxiv created 2000/11/24 · openalex publication_date 2001/09/01 · arxiv updated 2009/11/30 · openalex created_date 2017/04/07 · openalex updated_date 2026/07/28
A single-electron transistor (SET) comprising highly resistive Cr thin-film strips (sheet resistance ∼4 kΩ) instead of traditional tunnel barriers is reported. Two such strips (∼1 μm long) connect two Al outer electrodes to an Al island 1 μm in length equipped with a capacitively coupled gate. This transistor with a total asymptotic resistance of 110 kΩ showed a perfect Coulomb blockade and strictly e-periodic reproducible modulation by the gate in wide ranges of bias (V) and gate (Vg) voltages. In the Coulomb-blockade region (|V|⩽ about 0.5 mV), we observed a strong suppression of the transport current, allowing modulation curves V(Vg) with appreciable amplitude to be measured at a fixed bias current value I as low as 100 fA. The background-charge noise of our SET was found to be similar to that of typical Al/AlOx/Al tunnel-junction single-electron transistors, namely δQ≈5×10−4e/Hz at 10 Hz. The electron transport mechanism is discussed.