2000/05/15 by C. Riva, F. M. Peeters, K. Varga
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Atomic physics #Biexciton #Binding energy #Condensed matter physics #Exciton #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum well #Semiconductor #Semiconductor Quantum Structures and Devices #Trion #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.61.13873
published as Phys. Rev. B 61, 13873 (2000) · 9 pages, 11 figures
openalex publication_date 2000/05/15 · arxiv created 2000/10/27 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
A variational calculation of the ground-state energy of neutral excitons and of positively and negatively charged excitons (trions) confined in a single-quantum well is presented. We study the dependence of the correlation energy and of the binding energy on the well width and on the hole mass. The conditional probability distribution for positively and negatively charged excitons is obtained, providing information on the correlation and the charge distribution in the system. A comparison is made with available experimental data on trion binding energies in GaAs-, ZnSe-, and CdTe-based quantum well structures, which indicates that trions become localized with decreasing quantum well width.