2000/06/26 by Jonas Johansson, J. Johansson, David B. Haviland +1 · 1 citation
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.63.014201
published as Phys. Rev. B 63, 014201 (2001) · 10 pages, 7 figures
arxiv created 2000/06/26 · openalex publication_date 2000/12/12 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have numerically studied the behavior of one-dimensional tunnel junction arrays when random background charges are included using the ``orthodox'' theory of single-electron tunneling. Random background charge distributions are varied in both amplitude and density. The use of a uniform array as a transistor is discussed both with and without random background charges. An analytic expression for the gain near zero gate voltage in a uniform array with no background charges is derived. The gate modulation with background charges present is simulated.