2000/04/13 by É. P. Nakhmedov, E. P. Nakhmedov, H. Feldmann +3 · 1 citation
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.62.13490
arxiv created 2000/04/13 · openalex publication_date 2000/11/15 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Low-temperature quantum corrections to the conductivity and density of states (DOS) of crystals with substitutional impurities are calculated. Summing the leading logarithmic corrections to the DOS, its energy dependence near half-filling is obtained for a two-dimensional (2D) square crystal and a 3D simple cubic crystal. It is shown in two dimensions that substitutional impurities do not suppress the van Hove singularity in the middle of the band, though they change its energy dependence strongly. Weak disorder due to substitutional impurities in the 3D lattice results in a shallow dip in the center of the band. The calculation of quantum corrections to the conductivity of a 2D lattice shows that a well-known logarithmic localization correction exists for all band fillings. Furthermore, the magnitude of the correction increases as half-filling is approached. The evaluation of the obtained analytical results shows evidence of delocalized states in the center of the band of a 2D lattice with substitutional impurities.