2000/04/12 by Debdeep Jena, A. C. Gossard, Arthur. C. Gossard +2
Chemistry · Physics and Astronomy · #Atomic physics #Chemistry #Condensed matter physics #Dipole #Electron #Fermi gas #GaN-based semiconductor devices and materials #Heterojunction #Materials science #Molecular physics #Nanotechnology #Nitride #Optics #Optoelectronics #Physics #Piezoelectricity #Polar #Polarization (electrochemistry) #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor #Semiconductor Quantum Structures and Devices #Wide-bandgap semiconductor #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1063/1.1311832
8 pages, 5 figures
arxiv created 2000/04/12 · openalex publication_date 2000/10/15 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Unusually large spontaneous and piezoelectric fields in the III–V nitrides have led to the making of an entirely new class of two-dimensional electron gas. Fluctuation from a perfectly periodic binary structure in highly polar semiconductor alloys present the same physical situation as a random distribution of microscopic dipoles. The excess dipole distribution in the barrier layers is evaluated by a method similar to the virtual crystal approximation. It is shown that the mobility of electrons in the two-dimensional electron gas formed in highly polar heterostructures is intrinsically limited by scattering from such dipoles.