2000/01/22 by V. L. Gurevich, M. I. Muradov · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.62.1576
9 pages, 2 figures
arxiv created 2000/01/22 · openalex publication_date 2000/07/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We work out a theory of shot noise in a special case. This is a noise of the Coulomb drag current excited under the ballistic transport regime in a one-dimensional nanowire by a ballistic non-Ohmic current in a nearby parallel nanowire. We predict sharp oscillation of the noise power as a function of gate voltage or the chemical potential of electrons. We also study dependence of the noise on the voltage V across the driving wire. For relatively large values of V, the spectral density of the low-frequency noise is proportional to V2.