1999/12/31 by Katsuyuki Nakanishi, Yoshiko Oi Nakamura · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.61.11278
5 pages, 2 figures, Corrected typos and added references
arxiv created 2000/02/05 · openalex publication_date 2000/05/01 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The effect of the domain wall (DW) on the conductance in a ballistic ferromagnetic nanowire (FMNW) is revisited by exploiting a specific perturbation theory which is effective for a thin DW; the thinness is often the case in currently interested conductance measurements on FMNW's. Including the Hund coupling between carrier spins and local spins in a DW, the conductance of a FMNW in the presence of a very thin DW is calculated within the Landauer-B"uttiker formalism. It is revealed that the conductance plateaus are modified significantly, and the switching of the quantization unit from e2/h to about 2e2/h is produced in a FMNW by the introduction of a thin DW. This accounts well for recent observations in a FMNW.