1999/11/30 by S. J. Papadakis, E. P. De Poortere, M. Shayegan +1 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.84.5592
published as Phys. Rev. Lett 84, 5592 (2000) · 4 pages, 5 figures. To appear in PRL 84
arxiv created 2000/05/21 · arxiv updated 2009/11/30
Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field (B), on the direction of B relative to both the crystal axes and the current direction. The magnetoresistance features, and in particular the value of B above which the resistivity exhibits an insulating behavior, depend on the orientation of B. To explain the data, the anisotropic band structure of the holes and a re-population of the spin-subbands in the presence of B, as well as the coupling of the orbital motion to B, need to be taken into account.