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Activation gaps for the fractional quantum Hall effect: realistic treatment of transverse thickness

1999/09/10 by K. Park, K Park, N. Meskini +1 · 1 citation
Physics and Astronomy · #Band gap #Condensed matter physics #Coulomb #Electron #Electronic structure #Fermi gas #Fermi level #Fractional quantum Hall effect #Heterojunction #Local-density approximation #Materials science #Physics #Physics of Superconductivity and Magnetism #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum spin Hall effect #Range (aeronautics) #Surface and Thin Film Phenomena #Transverse plane #cond-mat.mes-hall

paper · pdf · doi:10.1088/0953-8984/11/38/308

published as J. Phys. condens. Matter 11, 7283 (1999) · 32 pages, 13 figures

openalex publication_date 1999/09/10 · arxiv created 1999/10/18 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

The activation gaps for fractional quantum Hall states at filling fractions = n /(2 n +1) are computed for heterojunction, square-quantum-well, and parabolic-quantum-well geometries, using an interaction potential calculated from a self-consistent electronic structure calculation in the local density approximation. The finite thickness is estimated to make a ~30% correction to the gap in the heterojunction geometry for typical parameters, which accounts for roughly half of the discrepancy between the experiment and theoretical gaps computed for a pure two-dimensional system. Certain model interactions are also considered. It is found that the activation energies behave qualitatively differently depending on whether the interaction is of longer or shorter range than the Coulomb interaction; there are indications that fractional Hall states close to the Fermi sea are destabilized for the latter.

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