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Spin-dependent scattering of a domain wall of controlled size

1999/09/15 by J. -E. Wegrowe, J.-E. Wegrowe, A. Comment +8 · 1 citation
Chemistry · Materials Science · Physics and Astronomy · #Amorphous solid #Anodic Oxide Films and Nanostructures #Chemistry #Condensed matter physics #Copper Interconnects and Reliability #Crystallography #Domain wall (magnetism) #Field (mathematics) #Giant magnetoresistance #Magnetic domain #Magnetic field #Magnetic properties of thin films #Magnetization #Magnetoresistance #Materials science #Micromagnetics #Nanotechnology #Nanowire #Optics #Physics #Scattering #Spin (aerodynamics) #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.61.12216

9 pages, 13 figures

arxiv created 1999/09/15 · openalex publication_date 2000/05/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo1.6 layer. This geometry allows the stabilization of a single domain wall in the Co wire, the thickness of which can be controlled by an external magnetic field. Comparing magnetization, resistivity, and magnetoresistance studies of single Co nanowires, of GdCo1.6 layers, and of the coupled system, gives evidence for an additional contribution to the magnetoresistance when the domain wall is compressed. This contribution could be interpreted as the spin-dependent scattering within the domain wall when the wall thickness becomes smaller than the spin diffusion length.

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