Universal Tc depression by irradiation defects in underdoped and overdoped cuprates

1999/08/27 by F. Rullier-Albenque, P.A. Vieillefond, P. A. Vieillefond +6 · 1 voice · 1 citation
Physics and Astronomy · #Advanced Condensed Matter Physics #Magnetic properties of thin films #Physics of Superconductivity and Magnetism #cond-mat.str-el #cond-mat.supr-con

paper · pdf · doi:10.1209/epl/i2000-00238-x

11 pages in Latex/Revtex format, 3 postscript figures

arxiv created 1999/08/27 · arxiv published 1999/08/27 · arxiv updated 1999/08/27 · openalex publication_date 2000/04/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30

Abstract

We report on a study of the influence of defects introduced in the CuO₂ planes of cuprates in a wide range of hole dopings n. T_c and electrical resistivity ρ(T) measurements have been performed on electron irradiated YBa₂Cu₃O_7-δ and Tl₂Ba₂CuO_6+x single crystals. A universal scaling between the decrease in T_c and \UNICODE[m]0x394ρ_2D\UNICODE[m]0xd7n, where \UNICODE[m]0x394ρ_2D is the increase of the 2D-resistance induced by the defects, is found for all the samples investigated here. This demonstrates that n is the relevant parameter to describe the transport properties all over the phase diagram, in contradiction with a recent suggestion of a change in the number of carriers from n to 1-n at the optimal doping. Moreover, the analysis of our data suggests that strong scattering persists on the overdoped side.

Cited by

• Disorder, metal-insulator crossover and phase diagram in high-T c cuprates

Discussions

• I recently came across this paper titled "Universal Tc depression by irradiation defects in underdoped and overdoped cuprates" studying the effect of disorder on high- $T_c$ materials. The statement i [stackexchange, 2 points]