1998/07/25 by V. F. Gantmakher, М. В. Голубков, M. V. Golubkov +4 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.str-el
paper · pdf · doi:10.1134/1.567874
4 RevTeX pages, 4 EPS figures embedded using psfig; submitted to JETP Letters
arxiv created 1998/07/25 · openalex publication_date 1998/08/01 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The field-induced superconductivity-destroying quantum transition in amorphous indium oxide films are investigated at low temperatures down to 30 mK. It is found that, on the high-field side of the transition, the magnetoresistance reaches a maximum and the phase can be insulating as well as metallic. With further increase of the magnetic field the resistance of the film drops and in the high-field limit approaches the resistance value at the transition point, so that at high fields the metallic phase occurs for both cases. We give a qualitative account of this behavior in terms of field-induced destruction of localized electron pairs.