Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition

1998/06/14 by S. Bogdanovich, M. P. Sarachik, R. N. Bhatt · 2 citations
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Chemistry #Composite material #Condensed matter physics #Conductivity #Electrical resistivity and conductivity #Insulator (electricity) #Materials science #Metal #Metallurgy #Metal–insulator transition #Physics #Scaling #Semiconductor materials and devices #Semiconductor materials and interfaces #Stress (linguistics) #Transition metal #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.82.137

arxiv created 1998/06/14 · openalex publication_date 1999/01/04 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value S_c, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form \ensuremathσ(S,T)\phantom\rule0ex0ex=\phantom\rule0ex0exAT^xf[(S\ensuremath-S_c)/T^y] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.

Citations

• Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions
• The Anderson-Mott transition
• The Anderson Transition: Time Reversal Symmetry and Universality

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