1998/05/26 by Kun Yang, D. Shahar, R. N. Bhatt +2 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1088/0953-8984/12/25/301
published as J. Phys. Condens. Matter 12, 5343 (2000). · 20 pages, 15 figures
arxiv created 1998/05/26 · openalex publication_date 2000/06/07 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
We report in this paper results of experimental and theoretical studies of transitions between different integer quantum Hall phases in two-dimensional electron systems, as well as the transition to the insulating phase at high magnetic fields. We focus mainly on the resistivity at the transitions. We first present results of a numerical calculation for a non-interacting electron model, which shows that the Thouless conductance is universal at integer quantum Hall transitions, just like the conductivity tensor. We then present experimental results for the measured longitudinal resistivity at the quantum Hall-insulator transition, which are found to be clustered around the universal value suggested theoretically for the non-interacting model, within a range of 15%. Finally, we investigate departure from universality due to finite temperature and finite system size near the transition point.