1997/11/13 by C. Pryor, Craig Pryor, J. Kim +5 · 2 citations
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.366631
To appear in J. Appl. Physics
arxiv created 1997/11/13 · openalex publication_date 1998/03/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The electronic structure of interfaces between lattice-mismatched semiconductors is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain—continuum elasticity [(CE), treated as a finite difference problem] and atomistic elasticity. While for small strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g., 7% for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C2 symmetry by the C4 symmetry in the CE method) when applied to C2-symmetric InAs pyramidal dots capped by GaAs.