1997/10/20 by I. J. Maasilta, V. J. Goldman · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Bound state #Condensed matter physics #Coupling (piping) #Electric field #Electron #Energetics #Engineering #Enhanced Data Rates for GSM Evolution #Excitation #Materials science #Physics #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum tunnelling #Semiconductor materials and devices #Telecommunications #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.57.r4273
4 pages, RevTex, 5 Postscript figures
arxiv created 1997/10/20 · openalex publication_date 1998/02/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling linewidths as a function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot-bound states, self-consistent edge electric field, and edge excitation drift velocity.