Normal-state Hall effect and the insulating resistivity of high-Tccuprates at low temperatures

1997/10/01 by Yoichi Ando, G. S. Boebinger, A. Passner +6 · 1 citation
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Magnetic and transport properties of perovskites and related materials #Physics of Superconductivity and Magnetism #cond-mat.supr-con

paper · pdf · doi:10.1103/physrevb.56.r8530

published as Phys. Rev. B 56 (1997) 8530R-8533R (Rapid Communications) · 4 pages, revtex, 2 figures

openalex publication_date 1997/10/01 · arxiv created 1997/10/15 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

The normal-state Hall coefficient R_H and the in-plane resistivity \ensuremathρ_ab are measured in La-doped Bi₂Sr₂CuO_y (T_c\ensuremath≃13 K) single crystals and La_2\ensuremath-xSr_xCuO₄ thin films by suppressing superconductivity with 61-T pulsed magnetic fields. In contrast to data above T_c, the R_H below \ensuremath∼10 K shows little temperature dependence in all the samples measured, irrespective of whether \ensuremathρ_ab exhibits insulating or metallic behavior. Thus, whatever physical mechanism gives rise to insulating behavior in the low-temperature normal state, it leaves the Hall conductivity relatively unchanged.

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• Strong charge fluctuations manifested in the high-temperature Hall coefficient of high-Tccuprates