1997/08/21 by K. P. Li, K.P. Li, Dragana Popović +2
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Semiconductor materials and devices #Semiconductor materials and interfaces #cond-mat.str-el
paper · pdf · doi:10.1016/s0921-4526(98)00174-4
4 pages, LaTeX, physica.sty (slightly modified prabib.sty), Submitted to the 1997 Conference on Electronic Properties of Two-Dimensional Systems
arxiv created 1997/08/21 · openalex publication_date 1998/06/01 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Measurements of conductance G on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 <~ T < 4~K) and mesoscopic fluctuations of the conductance at low temperatures (T~ < 1~K). Both were studied as a function of chemical potential (carrier concentration ns) controlled by gate voltage (Vg) and magnetic field B near the MIT. Fourier analysis of the low temperature fluctuations reveals several fluctuation scales in Vg that vary non-monotonically near the MIT. At higher temperatures, G(Vg,B) is similar to large FETs and exhibits a MIT. All of the observations support the suggestion that the MIT is driven by Coulomb interactions among the carriers.