1997/04/08 by Frank Epperlein, Michael Schreiber, Thomas Vojta · 3 citations
Physics and Astronomy · #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #Theoretical and Computational Physics #cond-mat.dis-nn #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.56.5890
published as Phys. Rev. B 56 (1997), 5890 · 7 pages RevTeX, 10 epsf-figures
arxiv created 1997/04/08 · openalex publication_date 1997/09/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study the influence of electron-electron interactions on the electronic properties of disordered materials. In particular, we consider the insulating side of a metal-insulator transition where screening breaks down and the electron-electron interaction remains long ranged. The investigations are based on the quantum Coulomb glass, a generalization of the classical Coulomb glass model of disordered insulators. The quantum Coulomb glass is studied by decoupling the Coulomb interaction by means of a Hartree-Fock approximation and exactly diagonalizing the remaining localization problem. We investigate the behavior of the Coulomb gap in the density of states when approaching the metal-insulator transition and study the influence of the interaction on the localization of the electrons. We find that the interaction leads to an enhancement of localization at the Fermi level.