1997/01/10 by D. Z. Liu, X. C. Xie
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat
paper · pdf · doi:10.1103/physrevb.55.15824
4 pages, 7 figures, also available at http://rainbow.uchicago.edu/~ldz/paper/paper.html
arxiv created 1997/01/10 · openalex publication_date 1997/06/15 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We study the localization properties in coupled double quantum wells with an in-plane magnetic field. The localization length is directly calculated using a transfer matrix technique and finite-size scaling analysis. We show that the system maps into a two-dimensional XY model and undergoes a disorder-driven Kosterlitz-Thouless-type metal-insulator transition depending on the coupling strength between the two-dimensional layers and the magnitude of the in-plane magnetic field. For a system with fixed disorder, the metallic regime appears to be a window to the magnetic field--coupling strength plane. Experimental implications of the transition will be discussed.