1997/01/09 by C. -T. Liang, Chi‐Te Liang, I. M. Castleton +6 · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.55.6723
published as Phys. Rev. B 55, 6723 (1997) · To be published in Phys. Rev. B (1997). 8 LaTex pages with 5 figures
arxiv created 1997/01/09 · openalex publication_date 1997/03/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each transition region between plateaus. Studies of this structure as a function of applied perpendicular magnetic field and source-drain bias indicate that resonant structure deriving from tightly bound states is split by Coulomb charging at zero magnetic field.