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Fractional Quantum Hall States in Narrow Channels

1992/12/17 by Daijiro Yoshioka · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Graphene research and applications #Quantum and electron transport phenomena #cond-mat

paper · pdf · doi:10.1143/jpsj.62.839

8 pages, 2 figures (not included)

arxiv created 1992/12/17 · openalex publication_date 1993/03/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

A model system is considered where two dimensional electrons are confined by a harmonic potential in one direction, and are free in the other direction. Ground state in strong magnetic fields is investigated through numerical diagonalization of the Hamiltonian. It is shown that the fractional quantum Hall states are realized even in the presence of the external potential under suitable conditions, and a phase diagram is obtained. Typeset Using REVTEX 1 It has been known that two-dimensional electron system in a strong magnetic field condenses into an incompressible liquid at low temperature which is known as Laughlin state. [1] This state causes the fractional quantum Hall effect (FQHE). [2] In the related phenomenon, integer quantum Hall effect (IQHE), importance of the edge states has been recognized. [3] Thus it is also of interest to know the details of the edge in the FQH states. Since effect of the edge should be dominant in the narrow channel, it is desirable to know the properties of the ground state in quantum wire in a situation where FQHE is observed for a bulk systems. Chui [4] has considered narrow channel system in a strong magnetic field. He has taken a

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