2007/03/09 by Atif Imtiaz, Steven M. Anlage, John D. Barry +2
Engineering · Physics and Astronomy · #Electromagnetic Compatibility and Measurements #Integrated Circuits and Semiconductor Failure Analysis #Near-Field Optical Microscopy #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.1063/1.2719164
published as Appl. Phys. Lett. 90, 143106 (2007) · 5 pages, 3 figures, 1 table
arxiv created 2007/03/09 · openalex publication_date 2007/04/02 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The authors report topography-free material contrast imaging on a nanofabricated boron-doped silicon sample measured with a near-field scanning microwave microscope over a broad frequency range. The boron doping was performed using the focus ion beam technique on a silicon wafer with nominal resistivity of 61Ωcm. A topography-free doped region varies in sheet resistance from 1000Ω∕◻ to about 400kΩ∕◻ within a lateral distance of 4μm. The qualitative spatial resolution in sheet resistance imaging contrast is no worse than 100nm as estimated from the frequency shift signal.