Physical mechanisms of interface-mediated intervalley coupling in Si

2009/01/31 by André Saraiva, A. L. Saraiva, M. J. Calderón +3 · 4 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Conduction band #Coupling (piping) #Degeneracy (biology) #Electron #Interface (matter) #Materials science #Molecule #Physics #Quantum #Quantum and electron transport phenomena #Quantum mechanics #Qubit #Scattering #Semiconductor materials and devices #Spin (aerodynamics) #Thermal conduction #cond-mat.mes-hall #cond-mat.mtrl-sci #quant-ph

paper · pdf · doi:10.1103/physrevb.80.081305

published as Phys. Rev. B 80, 081305(R) (2009) · 4 pages, revised version

openalex publication_date 2009/08/13 · arxiv created 2009/08/31 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that provides simple criteria for optimal fabrication parameters to maximize this splitting. Our work emphasizes the relevance of different interface-related properties to the valley splitting.

Citations

• Spins in few-electron quantum dots

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