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High-order fractional microwave-induced resistance oscillations in two-dimensional systems

2009/07/23 by S. Wiedmann, G. M. Gusev, O. É. Raichev +4 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.80.035317

published as Phys. Rev. B 80, 035317 (2009) · 5 pages, 5 figures

openalex publication_date 2009/07/23 · arxiv created 2009/07/30 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We report on the observation of microwave-induced resistance oscillations associated with the fractional ratio n/m of the microwave irradiation frequency to the cyclotron frequency for m up to 8 in a two-dimensional electron system with high electron density. The features are quenched at high microwave frequencies independent of the fractional order m. We analyze temperature, power, and frequency dependencies of the magnetoresistance oscillations and discuss them in connection with existing theories.

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