2009/01/10 by M. Remeika, Mikas Remeika, J. C. Graves +7 · 2 citations
Physics and Astronomy · #Cold Atom Physics and Bose-Einstein Condensates #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.102.186803
published as Phys. Rev. Lett. 102, 186803 (2009) · 4 pages, 4 figures
arxiv created 2009/01/10 · openalex publication_date 2009/05/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the localization-delocalization transition to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.