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Gate-voltage dependence of Kondo effect in a triangular quantum dot

2008/08/31 by T. Numata, T Numata, Y Nisikawa +5 · 1 citation
Chemistry · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Chemical and Physical Properties of Materials #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1088/1742-6596/150/2/022067

published as J. Phys.: Conference Series 150 (2009) 022067 · 4 pages, 4 figs: typos just below (4) are corrected, results are not affected

openalex publication_date 2009/02/01 · arxiv created 2009/03/12 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/29

Abstract

We study the conductance through a triangular triple quantum dot, which are connected to two noninteracting leads, using the numerical renormalization group (NRG). It is found that the system shows a variety of Kondo effects depending on the filling of the triangle. The SU(4) Kondo effect occurs at half-filling, and a sharp conductance dip due to a phase lapse appears in the gate-voltage dependence. Furthermore, when four electrons occupy the three sites on average, a local S=1 moment, which is caused by the Nagaoka mechanism, is induced along the triangle. The temperature dependence of the entropy and spin susceptibility of the triangle shows that this moment is screened by the conduction electrons via two separate stages at different temperatures. The two-terminal and four-terminal conductances show a clear difference at the gate voltages, where the SU(4) or the S=1 Kondo effects occurring.

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