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Effect of annealing on electron dephasing in three-dimensional polycrystalline metals

2001/12/21 by J. J. Lin, Juhn‐Jong Lin, Y. L. Zhong +3 · 4 citations
Chemistry · Mathematics · Physics and Astronomy · #Analytical Chemistry (journal) #Annealing (glass) #Chemistry #Condensed matter physics #Crystallite #Dephasing #Electron #Magnetic field #Magnetic properties of thin films #Magnetoresistance #Materials science #Mathematics #Metallurgy #Microstructure #Optics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Saturation (graph theory) #Scattering #Theoretical and Computational Physics #Weak localization #cond-mat.mes-hall

paper · pdf · doi:10.1209/epl/i2002-00591-8

published as Europhys. Lett. 57, 872 (2002)

arxiv created 2001/12/21 · openalex publication_date 2002/03/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We have studied the effect of thermal annealing on electron dephasing times τ ϕ in three-dimensional polycrystalline metals. Measurements are performed on as-sputtered and annealed AuPd and Sb thick films, using the weak-localization method. In all samples, we find that τ ϕ possesses an extremely weak temperature dependence as T → 0. Our results show that the effect of annealing is non-universal, and it depends strongly on the amount of disorder quenched in the microstructures during deposition. The observed "saturation" behavior of τ ϕ cannot be easily explained by magnetic scattering. We suggest that the issue of saturation can be better addressed in three-dimensional, rather than lower-dimensional, structures.

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