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Raman scattering in current-carrying molecular junctions

2008/08/03 by Michael Galperin, Mark A. Ratner, Abraham Nitzan · 4 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Gold and Silver Nanoparticles Synthesis and Applications #Molecular Junctions and Nanostructures #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.3109900

published as J. Chem. Phys. 130, 144109 (2009). · 46 pages, 7 figures

arxiv created 2008/08/03 · openalex publication_date 2009/04/09 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We present a theory for Raman scattering by current-carrying molecular junctions. The approach combines a nonequilibrium Green's function (NEGF) description of the nonequilibrium junction with a generalized scattering theory formulation for evaluating the light scattering signal. This generalizes our previous study [M. Galperin and A. Nitzan, Phys. Rev. Lett. 95, 206802 (2005); J. Chem. Phys. 124, 234709 (2006)] of junction spectroscopy by including molecular vibrations and developing machinery for calculation of state-to-state (Raman scattering) fluxes within the NEGF formalism. For large enough voltage bias, we find that the light scattering signal contains, in addition to the normal signal associated with the molecular ground electronic state, also a contribution from the inverse process originated from the excited molecular state as well as an interference component. The effects of coupling to the electrodes and of the imposed bias on the total Raman scattering as well as its components are discussed. Our result reduces to the standard expression for Raman scattering in the isolated molecule case, i.e., in the absence of coupling to the electrodes. The theory is used to discuss the charge-transfer contribution to surface enhanced Raman scattering for molecules adsorbed on metal surfaces and its manifestation in the biased junction.

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