Universal Linear Density of States for Tunneling into the Two-Dimensional Electron Gas in a Magnetic Field

1997/02/11 by H. B. Chan, P. I. Glicofridis, R. C. Ashoori +2 · 3 citations
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.79.2867

published as Phys.Rev.Lett.79:2867,1997 · 5 pages, 4 postscript figures, LateX, submitted to PRL

arxiv created 1997/02/11 · openalex publication_date 1997/10/13 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We have developed a technique capable of measuring the tunneling current into both localized and conducting states in a 2D electron system. I- V characteristics for tunneling are obtained with no distortions arising from low 2D in-plane conductivity. In a perpendicular magnetic field, a pseudogap develops in the tunneling density of states at the Fermi energy. We resolve a linear energy dependence of this pseudogap at low excitations. The slopes of this linear gap are strongly field dependent. The data are suggestive of a new model of the gap in the presence of disorder and external screening.

Citations

• Coulomb gap and low temperature conductivity of disordered systems

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