Single-parameter quantized charge pumping in high magnetic fields

2008/11/07 by B. Kaestner, Christoph Leicht, Ch. Leicht +5 · 3 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.3063128

published as Appl. Phys. Lett. 94, 012106 (2009) · This article has been submitted to Applied Physics Letters

arxiv created 2008/11/07 · openalex publication_date 2009/01/05 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.

Citations

• Single-shot read-out of an individual electron spin in a quantum dot

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