2009/01/15 by J. Sailer, V. Lang, G. Abstreiter +9
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1002/pssr.200802275
published as Phys. Status Solidi RRL 3, No. 2, 61-63 (2009) · 8 pages, 3 figures
openalex publication_date 2009/01/15 · arxiv created 2009/01/16 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Abstract We report on the realization and top‐gating of a two‐dimensional electron system in a nuclear spin free environment using 28 Si and 70 Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin‐free materials, making them promising hosts for solid‐state based quantum information processing devices. The two‐dimensional electron system exhibits a mobility of 18000 cm 2 /(V s) at a sheet carrier density of 4.6 × 10 11 cm –2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split‐gate structures realized with palladium Schottky top‐gates which effectively control the two‐dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)