2008/08/31 by Janus H. Wesenberg, J. H. Wesenberg · 1 citation
Computer Science · Engineering · Mathematics · Physics and Astronomy · #Atomic physics #Cold Atom Physics and Bose-Einstein Condensates #Computational physics #Condensed matter physics #Electrode #Electrostatics #Gapless playback #Geometry #Ion #Ion trap #Materials science #Mathematics #Molecular Junctions and Nanostructures #Multipole expansion #Physics #Plane (geometry) #Quadrupole ion trap #Quantum Information and Cryptography #Quantum mechanics #Surface (topology) #Trap (plumbing) #quant-ph
paper · pdf · doi:10.1103/physreva.78.063410
published as Phys. Rev. A 78, 063410 (2008) · Published version. Sec. III significantly changed. Some minor edits throughout
openalex publication_date 2008/12/05 · arxiv created 2008/12/18 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Surface-electrode (SE) rf traps are a promising approach to manufacturing complex ion-trap networks suitable for large-scale quantum information processing. In this paper we present analytical methods for modeling SE traps in the gapless plane approximation, and apply these methods to two particular classes of SE traps. For the SE ring trap we derive analytical expressions for the trap geometry and strength, and also calculate the depth in the absence of control fields. For translationally symmetric multipole configurations (analogs of the linear Paul trap), we derive analytical expressions for electrode geometry and strength. Further, we provide arbitrarily good approximations of the trap depth in the absence of static fields and identify the requirements for obtaining maximal depth. Lastly, we show that the depth of SE multipoles can be greatly influenced by control fields.