2006/07/03 by V. A. Maisheev · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Crystallography and Radiation Phenomena #Electromagnetic Effects on Materials #Nuclear materials and radiation effects #physics.acc-ph
paper · pdf · doi:10.1103/physrevstab.10.084701
published as Phys.Rev.STAccel.Beams10:084701,2007 · Comments: Latex, 9 pages, 9 figs
arxiv created 2006/07/03 · openalex publication_date 2007/08/22 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
An analytical description of volume reflection of charged ultrarelativistic particles in bent single crystals is considered. The relation describing the angle of volume reflection as a function of the transversal energy is obtained. Different angle distributions of the scattered protons in single crystals are found. Results of calculations for 400 GeV protons scattered by the silicon single crystal are presented.