2008/09/15 by D. Errandonea, R. S. Kumar, Ravhi S. Kumar +4 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #Copper-based nanomaterials and applications #Crystal Structures and Properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2981089
published as Journal of Applied Physics 104, 063524 (2008) · 34 pages, 3 tables, 6 figurea
openalex publication_date 2008/09/15 · arxiv created 2008/09/26 · arxiv updated 2009/12/01 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
X-ray diffraction measurements on the sphalerite-derivatives ZnGa2Se4 and CdGa2S4 have been performed upon compression up to 23 GPa in a diamond-anvil cell. ZnGa2Se4 exhibits a defect tetragonal stannite-type structure (I4¯2m) up to 15.5 GPa and in the range from 15.5 to 18.5 GPa the low-pressure phase coexists with a high-pressure phase, which remains stable up to 23 GPa. In CdGa2S4, we find that the defect tetragonal chalcopyrite-type structure (I4¯) is stable up to 17 GPa. Beyond this pressure a pressure-induced phase transition takes place. In both materials, the high-pressure phase has been characterized as a defect-cubic NaCl-type structure (Fm3¯m). The occurrence of the pressure-induced phase transitions is apparently related with an increase in the cation disorder on the semiconductors investigated. In addition, the results allow the evaluation of the axial compressibility and the determination of the equation of state for each compound. The obtained results are compared to those previously reported for isomorphic digallium sellenides. Finally, a systematic study of the pressure-induced phase transition in 23 different sphalerite-related ABX2 and AB2X4 compounds indicates that the transition pressure increases as the ratio of the cationic radii and anionic radii of the compounds increases.