2007/12/31 by Jun Zhou, J. Zhou · 1 citation
Engineering · Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.physe.2008.06.004
published as Physica E 41, 50 (2008). · 4 pages, 4 figures
arxiv created 2008/02/22 · openalex publication_date 2008/06/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study the effect of the Singwi-Tosi-Land-Sjölander local field correction on spin relaxation/dephasing in n-type GaAs quantum wells at low temperature by constructing and numerically solving the kinetic spin Bloch equations. We calculate the local field factor G(q) in quantum wells by numerically solving three equations which link the local field factor, the structure factor, and the dielectric function, self-consistently. Such a correction reduces both the electron-electron Coulomb scattering and the Coulomb Hartree-Fock term. We compare the spin relaxation times with and without this correction under different conditions such as temperature, electron density, well width and spin polarization. We find that this correction leads to a decrease/increase of the spin relaxation time in the strong/weak scattering limit. At high spin polarization, it reduces the Hartree-Fock term and consequently tends to decrease the spin relaxation time. The modification of the spin relaxation time by the local field correction is more or less moderate either due to the coexistence of scattering other than the Coulomb scattering at low spin polarization and/or due to the competing effects from the Coulomb scattering and the Coulomb Hartree-Fock term at high polarization.