2007/10/31 by B. R. Conrad, W. G. Cullen, W. Yan +1
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Graphene research and applications #Organic Electronics and Photovoltaics #cond-mat.dis-nn #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2823577
published as Appl. Phys. Lett. 91, 242110 (2007) · 13 pages, 4 figures, Published
openalex publication_date 2007/12/10 · arxiv created 2008/09/26 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1∕f, and the noise parameter varies inversely with gate voltage, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge’s parameter varies as an inverse power law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.