2008/03/05 by Yusuke Kozuka, Y. Kozuka, Tomofumi Susaki +3 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Condensed matter physics #Dielectric #Electron #Electronic and Structural Properties of Oxides #Hall effect #Limit (mathematics) #Magnetic field #Magnetoresistance #Materials science #Physics #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum limit #Quantum mechanics #Semiconductor materials and devices #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.101.096601
published as Phys. Rev. Lett. 101, 096601 (2008) · 4 pages, 4 figures
arxiv created 2008/03/05 · openalex publication_date 2008/08/27 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We explore the extreme quantum limit of photogenerated electrons in quantum paraelectric SrTiO3. This regime is distinct from conventional semiconductors, due to the large electron effective mass and large dielectric constant. At low temperature, the magnetoresistance and Hall resistivity saturate at a high magnetic field, deviating from conventional behavior. As a result, the Hall coefficient vanishes on the scale of the ratio of the Landau level splitting to the thermal energy, indicating the essential role of lowest Landau level occupancy, as limited by thermal broadening.