Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

2008/05/28 by L. H. Willems van Beveren, H. Huebl, Hans Huebl +7 · 1 citation
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.2960356

published as Appl. Phys. Lett. 93, 072102 (2008) · 4 pages, 4 figures, submitted to APL

arxiv created 2008/05/28 · openalex publication_date 2008/08/18 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Abstract

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At millikelvin temperatures, continuous wave spectra were obtained up to 40GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.

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