High Kondo temperature (TK∼80K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

2008/08/11 by K. Shibata, K. Hirakawa · 1 citation
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.2968206

published as Appl. Phys. Lett. 93, 062101 (2008) · 3 pages, 3 figures

openalex publication_date 2008/08/11 · arxiv created 2008/08/19 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ∼100nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ∼81K. This is the highest TK ever reported for artificial quantum nanostructures.

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