2008/02/29 by Lucia Steinke, L. Steinke, D. Schuh +3 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.77.235319
published as Phys. Rev. B 77, 235319 (2008) · 4 pages, 3 figures
openalex publication_date 2008/06/23 · arxiv created 2008/07/15 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Transport studies of a bent quantum Hall junction at integer filling factor \ensuremathν show strongly insulating states (\ensuremathν=1,2) at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias Vdc in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction G\ensuremath∼exp[\ensuremath-(\fracT0T)1/2] at lower T. The base temperature electric-field dependence shows I(E)\ensuremath∼exp[\ensuremath-(\fracE0E)1/2], consistent with one-dimensional (1D) variable-range hopping conduction. We observe almost identical behavior at \ensuremathν=1 and \ensuremathν=2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hopping, which either include or ignore interactions are compared all of which are consistent with the basic model of disorder coupled counterpropagating quantum Hall edges.