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Computational Study of Exciton Generation in Suspended Carbon Nanotube Transistors

2008/05/02 by Siyuranga O. Koswatta, Vasili Perebeinos, Mark Lundstrom +2
Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Graphene research and applications #Mechanical and Optical Resonators #cond-mat.mes-hall

paper · pdf · doi:10.1021/nl0801226

published as Nano Letters, 8 (6), pp. 1596--1601, 2008. · 17 pages, 5 figures

arxiv created 2008/05/02 · openalex publication_date 2008/05/06 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Optical emission from carbon nanotube transistors (CNTFETs) has recently attracted significant attention due to its potential applications. In this paper, we use a self-consistent numerical solution of the Boltzmann transport equation in the presence of both phonon and exciton scattering to present a detailed study of the operation of a partially suspended CNTFET light emitter, which has been discussed in a recent experiment. We determine the energy distribution of hot carriers in the CNTFET and, as reported in the experiment, observe localized generation of excitons near the trench-substrate junction and an exponential increase in emission intensity with a linear increase in current versus gate voltage. We further provide detailed insight into device operation and propose optimization schemes for efficient exciton generation; a deeper trench increases the generation efficiency, and use of high-k substrate oxides could lead to even larger enhancements.

Citations