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Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach

2007/07/31 by P. G. Silvestrov, K. B. Efetov
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Bilayer graphene #Charge (physics) #Charge carrier #Condensed matter physics #Electron #Gate voltage #Graphene #Graphene research and applications #Materials science #Nanoelectronics #Nanotechnology #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Transistor #Voltage #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.77.155436

published as Phys. Rev. B 77, 155436 (2008) · 5 pages, 6 figures, Title changed due to Editor

openalex publication_date 2008/04/28 · arxiv created 2008/06/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The distribution of charge induced by a gate voltage in a graphene strip is investigated. We analytically calculate the charge profile and demonstrate a strong (macroscopic) charge accumulation along the boundaries of a micrometer-wide strip. This charge inhomogeneity is especially important in the quantum Hall regime, where we predict the doubling of the number of edge states and the coexistence of two different types of such states. Applications to graphene-based nanoelectronics are discussed.

Citations