2008/03/06 by B. Kaestner, V. Kashcheyevs, Vyacheslavs Kashcheyevs +4
Physics and Astronomy · #Mechanical and Optical Resonators #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.2928231
published as Appl. Phys. Lett. 92, 192106 (2008) · Submitted to Appl. Phys. Lett
arxiv created 2008/03/06 · openalex publication_date 2008/05/12 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs–GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature, together with its simple configuration, makes this device a potential module for a scalable source of quantized current.