2005/04/30 by Yu. V. Bomze, Yu. Bomze, G. Gershon +5 · 6 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.95.176601
published as Phys. Rev. Lett. 95, 176601 (2005) · bibliography expanded
arxiv created 2005/05/05 · openalex publication_date 2005/10/17 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present measurements of the time-dependent fluctuations of electrical current in a voltage-biased tunnel junction. We were able to simultaneously extract the first three moments of the current counting statistics. Detailed comparison of the second and the third moments reveals that the statistics is accurately described as Poissonian, expected for spontaneous current fluctuations due to electron charge discreteness, realized in tunneling transport at negligible coupling to environment.