2007/09/30 by H. J. Krenner, Hubert J. Krenner, Craig Pryor +12
Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Electronic and Structural Properties of Oxides #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.mtrl-sci #quant-ph
paper · pdf · doi:10.1016/j.physe.2007.09.165
published as Physica E 40, 1785-1789 (2008) · Proccedings paper for MSS-13, 7 pages, 4 figures
openalex publication_date 2007/10/11 · arxiv created 2008/01/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.