Polariton light-emitting diode in a GaAs-based microcavity

2007/12/11 by Daniele Bajoni, Elizaveta Semenova, A. Lemaı̂tre +8 · 1 citation
Engineering · Physics and Astronomy · #Plasmonic and Surface Plasmon Research #Strong Light-Matter Interactions #Thermal Radiation and Cooling Technologies #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.77.113303

published as Physical Review B 77, 113303 (2008) · 5 pages 3 figures

arxiv created 2007/12/11 · openalex publication_date 2008/03/05 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Cavity polaritons have been shown these last years to exhibit a rich variety of nonlinear behaviors which could be used in new polariton based devices. Operation in the strong coupling regime under electrical injection remains a key step toward a practical polariton device. We report here on the realization of a polariton based light-emitting diode using a GaAs microcavity with doped Bragg mirrors. Both photocurrent and electroluminescence spectra are governed by cavity polaritons up to 100\phantom\rule0.3em0exK.

Citations

• Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity.
• Polariton Laser Using Single MicropillarGaAs−GaAlAsSemiconductor Cavities
• Circuit Quantum Electrodynamics: Coherent Coupling of a Single Photon to a Cooper Pair Box
• Strong coupling in a single quantum dot–semiconductor microcavity system

Cited by

• Energy relaxation in one-dimensional polariton condensates