2007/08/31 by Y. Y. Wang, M. W. Wu
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.77.125323
published as Phys. Rev. B 77, 125323 (2008). · 6 pages, 4 figures, to be published in PRB
arxiv created 2008/02/18 · openalex publication_date 2008/03/18 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose a scheme to manipulate the spin coherence in vertically coupled GaAs double quantum dots. Up to 10 orders of magnitude variation of the spin relaxation and 2 orders of magnitude variation of the spin dephasing can be achieved by a small gate voltage vertically applied on the double dot. Specially, large variation of spin relaxation still exists at 0\phantom\rule0.3em0exK. In the calculation, the equation-of-motion approach is applied to obtain the electron decoherence time and all the relevant spin decoherence mechanisms, such as the spin-orbit coupling together with the electron-bulk-phonon scattering, the direct spin-phonon coupling due to the phonon-induced strain, the hyperfine interaction, and the second-order process of electron-phonon scattering combined with the hyperfine interaction, are included. The condition to obtain the large variations of spin coherence is also addressed.